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onsemi SMMBT6521LT1G BJTs - Bipolar Transistors SS LN XSTR NPN 50V

ModelSMMBT6521LT1G
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Technology: Si

Unit Weight: 39 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 600

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 500 mV

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