onsemi SHN1B01FDW1T1G BJTs - Bipolar Transistors NPN PNP Bipolar Transistor
Manufactureronsemi(View more products from this manufacturer)
ModelSHN1B01FDW1T1G
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Technology: Si
Unit Weight: 13.430 mg
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 380 mW
DC Current Gain hFE Max: - 400, 400
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 60 V
Continuous Collector Current: 200 mA
Maximum DC Collector Current: 200 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: - 200, 200
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 250 mV, 300 mV
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