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Width: 34.1 mm
Height: 12.35 mm
Length: 63.3 mm
Fall Time: 9.3 ns
Rise Time: 9 ns
Technology: SiC
Configuration: Full-Bridge
Mounting Style: Screw Mount
Number of Channels: 4 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 100 W
Vgs - Gate-Source Voltage: - 10 V, + 22 V
Typical Turn-On Delay Time: 40.4 ns
Typical Turn-Off Delay Time: 109.5 ns
Id - Continuous Drain Current: 38 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 38.5 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 4.4 V
