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Fall Time: 12 ns
Rise Time: 16 ns
Technology: SiC
Configuration: Dual
Mounting Style: Press Fit
Transistor Polarity: N-Channel
Pd - Power Dissipation: 328 W
Vgs - Gate-Source Voltage: - 8 V, + 18 V
Typical Turn-On Delay Time: 53 ns
Typical Turn-Off Delay Time: 150 ns
Id - Continuous Drain Current: 154 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 14 mOhms
Vds - Drain-Source Breakdown Voltage: 900 V
