Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts

onsemi NVMYS012N10MCLTWG MOSFETs MOSFET - Power, Single N-Channel 100 V, 12.2 mohm, 52 A

Name: onsemi NVMYS012N10MCLTWG MOSFETs MOSFET - Power, Single N-Channel 100 V, 12.2 mohm, 52 A
Brand: onsemi

ModelNVMYS012N10MCLTWG

Contact

Quantity

Secure Checkout

Quality Engagement

Easy change and return

Delivery Available

Fall Time: 4.6 ns

Rise Time: 2.7 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 19 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 72 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8.4 ns

Typical Turn-Off Delay Time: 23.8 ns

Id - Continuous Drain Current: 52 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 51 S

Rds On - Drain-Source Resistance: 18.3 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 3 V