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Fall Time: 3.5 ns, 78 ns
Rise Time: 6.5 ns, 66 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 900 pC, 2.2 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 270 mW
Vgs - Gate-Source Voltage: - 20 V, + 12 V
Typical Turn-On Delay Time: 5.8 ns, 15 ns
Typical Turn-Off Delay Time: 13.5 ns, 56 ns
Id - Continuous Drain Current: 250 mA, 880 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.08 S, 3 S
Rds On - Drain-Source Resistance: 215 mOhms, 1 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V, 30 V
Vgs th - Gate-Source Threshold Voltage: 610 mV, 1.2 V
