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Width: 1.24 mm
Height: 0.85 mm
Length: 2.1 mm
Fall Time: 41 ns
Rise Time: 8.2 ns
Technology: Si
Unit Weight: 6.200 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 1.2 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 330 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 5 ns
Typical Turn-Off Delay Time: 23 ns
Id - Continuous Drain Current: 750 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.5 S
Rds On - Drain-Source Resistance: 350 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 650 mV
