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Type: Power MOSFET
Vgs(th): 3 V
Vgs (Max): 20V
Gate Charge (Qg): 43nC
Power consumption: 800mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 30V
Continuous drain current: 4.8A
Input Capacitance (Ciss): 1190pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 23mOhm
Drive Voltage (Max Rds On, Min Rds On): 4.5|10V
