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Width: 1.25 mm
Height: 0.9 mm
Length: 2 mm
Fall Time: 4.7 ns
Rise Time: 4.7 ns
Technology: Si
Unit Weight: 6.200 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 1.5 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 630 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 6 ns
Typical Turn-Off Delay Time: 25 ns
Id - Continuous Drain Current: 1.2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 0.5 S
Rds On - Drain-Source Resistance: 299 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 650 mV
