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Width: 1.25 mm
Height: 0.9 mm
Length: 2 mm
Fall Time: 11 ns
Rise Time: 12 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 6 ns
Typical Turn-Off Delay Time: 21 ns
Id - Continuous Drain Current: 4 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 9 S
Rds On - Drain-Source Resistance: 70 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
