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Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 700 mW
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 180 V
Continuous Collector Current: 600 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 80 at 1 mA, 5 V
Collector- Emitter Voltage VCEO Max: 160 V
