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Fall Time: 50 us
Rise Time: 120 us
Technology: Si
Unit Weight: 21.100 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 8.9 W
Vgs - Gate-Source Voltage: - 14 V, + 14 V
Typical Turn-On Delay Time: 25 us
Typical Turn-Off Delay Time: 20 us
Id - Continuous Drain Current: 2 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 165 mOhms
Vds - Drain-Source Breakdown Voltage: 42 V
Vgs th - Gate-Source Threshold Voltage: 1.3 V
