onsemi MMBT5401M3T5G BJTs - Bipolar Transistors 150 V, 60 mA
Manufactureronsemi(View more products from this manufacturer)
ModelMMBT5401M3T5G
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Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 130 mW
Gain Bandwidth Product fT: 180 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 160 V
Continuous Collector Current: - 50 mA
Maximum DC Collector Current: 60 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 20
Collector- Emitter Voltage VCEO Max: 150 V
Collector-Emitter Saturation Voltage: 150 mV
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