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onsemi HGT1S10N120BNST Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R | EMIN.CO.ID

IGBTs
onsemi HGT1S10N120BNST Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R

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onsemi HGT1S10N120BNST Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(2+Tab) D2PAK T/R

Manufactureronsemi(View more products from this manufacturer)

ModelHGT1S10N120BNST

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No. of Pins: 3

Product Range: NPT Series

Power Dissipation: 298

Transistor Mounting: Surface Mount

Transistor Case Style: TO-263AB (D2PA

Operating Temperature Max: 150 °C

Continuous Collector Current: 35

Collector Emitter Voltage Max: 1.2

Collector Emitter Saturation Voltage: 2.45

Datasheet

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