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Fall Time: 38.4 us, 38.4 us
Rise Time: 350 ns, 350 ns
Technology: Si
Unit Weight: 0.520 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 7.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.4 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 20 ns, 20 ns
Typical Turn-Off Delay Time: 22 us, 22 us
Id - Continuous Drain Current: 5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 7 S, 7 S
Rds On - Drain-Source Resistance: 37.5 mOhms, 37.5 mOhms
Vds - Drain-Source Breakdown Voltage: 24 V
Vgs th - Gate-Source Threshold Voltage: 1.3 V
