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Technology: Si
Unit Weight: 14.740 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 7 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 800 mW
Emitter- Base Voltage VEBO: 2 V
Continuous Collector Current: 150 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 100 at 50 mA, 5 V
Collector- Emitter Voltage VCEO Max: 12 V
