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onsemi CPH5524-TL-E BJTs - Bipolar Transistors HIGH-FREQUENCY AMPLIFIER

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Technology: Si

Unit Weight: 6.300 mg

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.2 W

DC Current Gain hFE Max: 560

Gain Bandwidth Product fT: 380 MHz, 390 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V, 50 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 160 mV, 240 mV

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