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Technology: Si
Unit Weight: 1.800 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 1 W
Gain Bandwidth Product fT: 120 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 180 V
Continuous Collector Current: 1.5 A
Maximum DC Collector Current: 1.5 A
Maximum Operating Temperature: + 150 C
Collector- Emitter Voltage VCEO Max: 160 V
Collector-Emitter Saturation Voltage: 200 mV
