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Vgs (Max): 40V
Power consumption: 400mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 60V
Continuous drain current: 150mA
Input Capacitance (Ciss): 50pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 7.5Ohm
Drive Voltage (Max Rds On, Min Rds On): 5|10V
