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Type: Small Signal
Vgs(th): 1 V
Gate Charge (Qg): 3.3nC
Power consumption: 375mW|4.35W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 3A
Input Capacitance (Ciss): 184pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 55mOhm
