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Type: Power MOSFET
Vgs(th): 1 V
Vgs (Max): 8V
Gate Charge (Qg): 0.89nC
Power consumption: 560mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 20V
Continuous drain current: 1.02A
Input Capacitance (Ciss): 45pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 340mOhm
Drive Voltage (Max Rds On, Min Rds On): 1.8|4.5V
