Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Gain: 26.4 dB
Technology: Si
Unit Weight: 588 mg
Output Power: 600 W
Mounting Style: Screw Mount
Transistor Type: LDMOS FET
Number of Channels: 2 Channel
Operating Frequency: 1.8 MHz to 400 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.333 kW
Vgs - Gate-Source Voltage: + 10 V
Id - Continuous Drain Current: 32 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 33.6 S
Vds - Drain-Source Breakdown Voltage: 179 V
Vgs th - Gate-Source Threshold Voltage: 2.9 V
