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Gain: 19.7 dB
Technology: Si
Unit Weight: 4.733 g
Output Power: 500 W
Mounting Style: Screw Mount
Number of Channels: 1 Channel
Operating Frequency: 960 MHz to 1.215 MHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: + 10 V
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 110 V
Vgs th - Gate-Source Threshold Voltage: 2.4 V
