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Gain: 28 dB
Technology: Si
Unit Weight: 6.396 g
Output Power: 300 W
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Operating Frequency: 1.8 MHz to 600 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.05 kW
Vgs - Gate-Source Voltage: + 10 V
Maximum Operating Temperature: + 150 C
Vds - Drain-Source Breakdown Voltage: 133 V
Vgs th - Gate-Source Threshold Voltage: 2.7 V
