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Gain: 15.7 dB
Technology: Si
Unit Weight: 529.550 mg
Output Power: 32 W
Mounting Style: SMD/SMT
Transistor Type: LDMOS FET
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Operating Frequency: 764 MHz to 941 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 317 W
Vgs - Gate-Source Voltage: + 12 V
Id - Continuous Drain Current: 10 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 7.8 S
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 2.6 V
