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Nexperia PSMN1R1-25YLC,115 MOSFETs N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

Name: Nexperia PSMN1R1-25YLC,115 MOSFETs N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
Brand: Nexperia

ModelPSMN1R1-25YLC,115

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Technology: Si

Unit Weight: 91.420 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 83 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 215 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.15 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 1.43 V