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Width: 0.65 mm
Height: 0.4 mm
Length: 1.05 mm
Fall Time: 6 ns
Rise Time: 5 ns
Technology: Si
Unit Weight: 0.600 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 1.19 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 360 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 2.3 ns
Typical Turn-Off Delay Time: 13.5 ns
Id - Continuous Drain Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 480 mS
Rds On - Drain-Source Resistance: 1.02 Ohms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 700 mV
