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Fall Time: 60 ns
Rise Time: 30 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel Trench MOSFET
Qg - Gate Charge: 26 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 12.5 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 69 ns
Typical Turn-Off Delay Time: 7 ns
Id - Continuous Drain Current: 14 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 29 S
Rds On - Drain-Source Resistance: 14 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 900 mV
