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Fall Time: 3 ns
Rise Time: 7 ns
Technology: Si
Unit Weight: 1.290 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 1.05 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 4.03 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 4 ns
Typical Turn-Off Delay Time: 12 ns
Id - Continuous Drain Current: 590 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 600 mS
Rds On - Drain-Source Resistance: 670 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 450 mV
