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Technology: Si
Unit Weight: 2.806 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 680 pC, 1.14 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 330 mW
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Id - Continuous Drain Current: 800 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 290 mOhms, 670 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 500 mV, 1.3 V
