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Fall Time: 48 ns
Rise Time: 15 ns
Technology: Si
Unit Weight: 6.750 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Qg - Gate Charge: 7.8 nC
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1.17 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 3 ns
Typical Turn-Off Delay Time: 112 ns
Id - Continuous Drain Current: 3.8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 10 S
Rds On - Drain-Source Resistance: 87 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
