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Width: 1.4 mm
Height: 1 mm
Length: 3 mm
Technology: Si
Unit Weight: 1 g
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 250 mW
DC Current Gain hFE Max: 200
Gain Bandwidth Product fT: 20 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 500 V
Continuous Collector Current: 300 mA
Maximum DC Collector Current: 300 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 40
Collector- Emitter Voltage VCEO Max: 400 V
Collector-Emitter Saturation Voltage: 750 mV
