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Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 25 W
DC Current Gain hFE Max: 250
Gain Bandwidth Product fT: 140 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 100 V
Continuous Collector Current: 3 A
Maximum DC Collector Current: 8 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 10
Collector- Emitter Voltage VCEO Max: 100 V
Collector-Emitter Saturation Voltage: 225 mV
