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Width: 1.7 mm
Height: 1 mm
Length: 3.1 mm
Technology: Si
Unit Weight: 20 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 750 mW
DC Current Gain hFE Max: 200 at 100 mA, 2 V
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 20 V
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 200 at 100 mA, 2 V, 200 at 500 mA, 2 V, 200 at 1000 mA, 2 V, 150 at 2000 mA, 2 V
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 400 mV
