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Width: 1.35 mm
Height: 1 mm
Length: 2.2 mm
Technology: Si
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 350 mW
DC Current Gain hFE Max: 300 at 1 mA, 5 V
Gain Bandwidth Product fT: 150 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 40 V
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 300 at 1 mA, 5 V, 300 at 100 mA, 5 V, 250 at 500 mA, 5 V, 160 at 1 A, 5 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 500 mV
