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Technology: Si
Unit Weight: 7.085 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 2 W
DC Current Gain hFE Max: 350
Gain Bandwidth Product fT: 125 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 30 V
Continuous Collector Current: - 1 A
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 250
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 85 mV
