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Technology: Si
Unit Weight: 7.265 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 2 W
DC Current Gain hFE Max: 305, 375
Gain Bandwidth Product fT: 120 MHz, 100 MHz
Emitter- Base Voltage VEBO: 7 V
Collector- Base Voltage VCBO: 120 V
Continuous Collector Current: 1 A
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 240, 190
Collector- Emitter Voltage VCEO Max: 120 V
Collector-Emitter Saturation Voltage: 90 mV, 150 mV
