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Width: 0.62 mm
Height: 0.47 mm
Length: 1.02 mm
Technology: Si
Unit Weight: 0.800 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 430 mW
DC Current Gain hFE Max: 200 at 10 mA, 2 V
Gain Bandwidth Product fT: 300 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 40 V
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V, 150 at 100 mA, 2 V, 40 at 500 mA, 2 V
Collector- Emitter Voltage VCEO Max: 40 V
Collector-Emitter Saturation Voltage: 350 mV
