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Width: 3.7 mm
Height: 1.7 mm
Length: 6.7 mm
Technology: Si
Unit Weight: 1 g
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: PNP
Pd - Power Dissipation: 2 W
DC Current Gain hFE Max: 250 at 500 mA, 2 V
Gain Bandwidth Product fT: 130 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 30 V
Maximum DC Collector Current: 5.3 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 250 at 500 mA, 2 V, 250 at 1 A, 2 V, 200 at 2 A, 2 V, 130 at 4 A, 2 V, 80 at 7 A, 2 V
Collector- Emitter Voltage VCEO Max: 30 V
Collector-Emitter Saturation Voltage: 185 mV
