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Fall Time: 4 ns
Rise Time: 2 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 N-channel Trench MOSFET
Qg - Gate Charge: 470 pC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.8 W
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Typical Turn-On Delay Time: 1 ns
Typical Turn-Off Delay Time: 5 ns
Id - Continuous Drain Current: 350 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1.1 S
Rds On - Drain-Source Resistance: 2.8 Ohms
Vds - Drain-Source Breakdown Voltage: 50 V
Vgs th - Gate-Source Threshold Voltage: 900 mV
