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Technology: Si
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 235 mW
Gain Bandwidth Product fT: 170 MHz
Emitter- Base Voltage VEBO: 10 V
Collector- Base Voltage VCBO: 80 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 50
Collector- Emitter Voltage VCEO Max: 80 V
Collector-Emitter Saturation Voltage: 100 mV
