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Fall Time: 10 ns
Rise Time: 10 ns
Technology: GaN
Unit Weight: 123 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 22 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 187 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 47.2 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 41 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 4.5 V
