Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Vgs(th): 2.8 V
Vgs (Max): 16V
Gate Charge (Qg): 124nC
Power consumption: 204W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 55V
Continuous drain current: 100A
Input Capacitance (Ciss): 7750pF
Operating temperature range: -55 to 175C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 4.9mOhm
Drive Voltage (Max Rds On, Min Rds On): 5|10V
