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Width: 3.7 mm
Height: 1.7 mm
Length: 6.7 mm
Technology: Si
Unit Weight: 112 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 650 mW
DC Current Gain hFE Max: 63 at 5 mA, 2 V
Gain Bandwidth Product fT: 180 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 100 V
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 63 at 5 mA, 2 V, 63 at 150 mA, 2 V, 40 at 500 mA, 2 V
Collector- Emitter Voltage VCEO Max: 80 V
Collector-Emitter Saturation Voltage: 500 mV
