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Technology: Si
Unit Weight: 11 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN, PNP
Pd - Power Dissipation: 600 mW
DC Current Gain hFE Max: 400 at 100 mA, 1 V
Gain Bandwidth Product fT: 100 MHz, 80 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 50 V
Maximum DC Collector Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 160 at 100 mA, 1 V
Collector- Emitter Voltage VCEO Max: 45 V
Collector-Emitter Saturation Voltage: 700 mV
