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Technology: Si
Unit Weight: 3.300 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 420 mW
DC Current Gain hFE Max: 250 at 150 mA, 2 V
Gain Bandwidth Product fT: 180 MHz
Emitter- Base Voltage VEBO: 5 V
Collector- Base Voltage VCBO: 60 V
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 63 at 150 mA, 2 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 500 mV
