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Fall Time: 5 ns
Rise Time: 4 ns
Technology: Si
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 800 pC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 420 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 3 ns
Typical Turn-Off Delay Time: 10 ns
Id - Continuous Drain Current: 320 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 400 mS
Rds On - Drain-Source Resistance: 1.6 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
