Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Vgs(th): 2.1 V
Vgs (Max): 20V
Gate Charge (Qg): 0.6nC
Power consumption: 360mW
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 60V
Continuous drain current: 450mA
Input Capacitance (Ciss): 50pF
Operating temperature range: 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 1.6Ohm
Drive Voltage (Max Rds On, Min Rds On): 10V
