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Gain: 8.9 dB
Technology: GaAs
Output Power: 20.3 dBm
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Operating Frequency: 45 MHz to 6 GHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 360 mW
Vgs - Gate-Source Voltage: + 480 mV
Id - Continuous Drain Current: 60 mA
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 392 mS
Vds - Drain-Source Breakdown Voltage: 4 V
Vgs th - Gate-Source Threshold Voltage: 260 mV
