Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 400 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: PNP
Pd - Power Dissipation: 750 mW
DC Current Gain hFE Max: 120
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 350 V
Continuous Collector Current: 1 A
Maximum DC Collector Current: 1 A
Maximum Operating Temperature: + 200 C
Minimum Operating Temperature: - 65 C
DC Collector/Base Gain hfe Min: 15
Collector- Emitter Voltage VCEO Max: 300 V
Collector-Emitter Saturation Voltage: 2 V
